p4ke6.8 thru p4ke540a vishay general semiconductor document number: 88365 revision: 22-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 t rans z orb ? transient voltage suppressors features ? glass passivated chip junction ? available in uni-directional and bi-directional ? 400 w peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. mechanical data case: do-204al, molded epoxy over passivated chip molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs comp liant, commercial grade base p/nhe3 - rohs co mpliant, high reliability/ automotive grade (aec q101 qualified) terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix meets jesd 201 class 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test note: p4ke250 ~ p4ke540a and p4ke250c ~ p4ke440ca for commercial grade only polarity: for uni-directional types the color band denotes cathode end, no marking on bi-directional types devices for bi-direction applications for bi-direction use c or ca suffix (e.g. p4ke440ca). electrical characteristics apply in both directions. primary characteristics v br uni-directional 6.8 v to 540 v v br bi-directional 6.8 v to 440 v p ppm 400 w p d 1.5 w i fsm (uni-directional only) 40 a t j max. 175 c do-204al (do-41) notes: (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) measured on 8.3 ms single half si ne-wave or equivalent square wave, dut y cycle = 4 pulses per minute maximum (3) v f = 3.5 v for p4ke220(a) and below; v f = 5.0 v for p4ke250(a) and above maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit peak power dissipation with a 10/1000 s waveform (1) (fig. 1) p ppm 400 w peak pulse current with a 10/1000 s waveform (1) i ppm see next table a power dissipation on infi nite heatsink at t l = 75 c (fig. 5) p d 1.5 w peak forward surge current, 8.3 ms si ngle half sine-wave uni-directional only (2) i fsm 40 a maximum instantaneous forward voltage at 25 a for uni-directional only (3) v f 3.5/5.0 v operating junction and storage temperature range t j , t stg - 55 to + 175 c
p4ke6.8 thru p4ke540a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88365 revision: 22-oct-08 2 electrical characteristics (t a = 25 c unless otherwise noted) device type breakdown voltage v br at i t (1) (v) test current i t (ma) stand- off voltage v wm (v) maximum reverse leakage at v wm i d (3) (a) maximum peak pulse current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) maximum temperature coefficient of v br (%/c) min. max. p4ke6.8 6.12 7.48 10 5.50 1000 37.0 10.8 0.057 p4ke6.8a 6.45 7.14 10 5.80 1000 38.1 10.5 0.057 p4ke7.5 6.75 8.25 10 6.05 500 34.2 11.7 0.061 p4ke7.5a 7.13 7.88 10 6.40 500 35.4 11.3 0.061 p4ke8.2 7.38 9.02 10 6.63 200 32.0 12.5 0.065 p4ke8.2a 7.79 8.61 10 7.02 200 33.1 12.1 0.06 p4ke9.1 8.19 10.0 1.0 7.37 50 29.0 13.8 0.068 p4ke9.1a 8.65 9.55 1.0 7.78 50 29.9 13.4 0.068 p4ke10 9.00 11.0 1.0 8.10 10 26.7 15.0 0.073 p4ke10a 9.50 10.5 1.0 8.55 10 27.6 14.5 0.073 p4ke11 9.90 12.1 1.0 8.92 5.0 24.7 16.2 0.075 p4ke11a 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.075 p4ke12 10.8 13.2 1.0 9.72 1.0 23.1 17.3 0.076 p4ke12a 11.4 12.6 1.0 10.2 1.0 24.0 16.7 0.078 p4ke13 11.7 14.3 1.0 10.5 1.0 21.1 19.0 0.081 p4ke13a 12.4 13.7 1.0 11.1 1.0 22.0 18.2 0.081 p4ke15 13.5 16.5 1.0 12.1 1.0 18.2 22.0 0.084 p4ke15a 14.3 15.8 1.0 12.8 1.0 18.9 21.2 0.084 p4ke16 14.4 17.6 1.0 12.9 1.0 17.0 23.5 0.086 p4ke16a 15.2 16.8 1.0 13.6 1.0 17.8 22.5 0.086 p4ke18 16.2 19.8 1.0 14.5 1.0 15.1 26.5 0.088 p4ke18a 17.1 18.9 1.0 15.3 1.0 15.9 25.2 0.088 p4ke20 18.0 22.0 1.0 16.2 1.0 13.7 29.1 0.090 p4ke20a 19.0 21.0 1.0 17.1 1.0 14.4 27.7 0.090 p4ke22 19.8 24.2 1.0 17.8 1.0 12.5 31.9 0.092 p4ke22a 20.9 23.1 1.0 18.8 1.0 13.1 30.6 0.092 p4ke24 21.6 26.4 1.0 19.4 1.0 11.5 34.7 0.094 p4ke24a 22.8 25.2 1.0 20.5 1.0 12.0 33.2 0.094 p4ke27 24.3 29.7 1.0 21.8 1.0 10.2 39.1 0.096 p4ke27a 25.7 28.4 1.0 23.1 1.0 10.7 37.5 0.096 p4ke30 27.0 33.0 1.0 24.3 1.0 9.2 43.5 0.097 p4ke30a 28.5 31.5 1.0 25.6 1.0 9.7 41.4 0.097 p4ke33 29.7 36.3 1.0 26.8 1.0 8.4 47.7 0.098 p4ke33a 31.4 34.7 1.0 28.2 1.0 8.8 45.7 0.098 p4ke36 32.4 39.6 1.0 29.1 1.0 7.7 52.0 0.099 p4ke36a 34.2 37.8 1.0 30.8 1.0 8.0 49.9 0.099 p4ke39 35.1 42.9 1.0 31.6 1.0 7.1 56.4 0.100 p4ke39a 37.1 41.0 1.0 33.3 1.0 7.4 53.9 0.100 p4ke43 38.7 47.3 1.0 34.8 1.0 6.5 61.9 0.101 p4ke43a 40.9 45.2 1.0 36.8 1.0 6.7 59.3 0.101 p4ke47 42.3 51.7 1.0 38.1 1.0 5.9 67.8 0.101 p4ke47a 44.7 49.4 1.0 40.2 1.0 6.2 64.8 0.101 p4ke51 45.9 56.1 1.0 41.3 1.0 5.4 73.5 0.102 p4ke51a 48.5 53.6 1.0 43.6 1.0 5.7 70.1 0.102 p4ke56 50.4 61.6 1.0 45.4 1.0 5.0 80.5 0.103 p4ke56a 53.2 58.8 1.0 47.8 1.0 5.2 77.0 0.103 p4ke62 55.8 68.2 1.0 50.2 1.0 4.5 89.0 0.104 p4ke62a 58.9 65.1 1.0 53.0 1.0 4.7 85.0 0.104 p4ke68 61.2 74.8 1.0 55.1 1.0 4.1 98.0 0.104 p4ke68a 64.6 71.4 1.0 58.1 1.0 4.3 92.0 0.104 p4ke75 67.5 82.5 1.0 60.7 1.0 3.7 108 0.105 p4ke75a 71.3 78.8 1.0 64.1 1.0 3.9 103 0.105
p4ke6.8 thru p4ke540a vishay general semiconductor document number: 88365 revision: 22-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 notes: (1) pulse test: t p 50 ms (2) surge current waveform per fig. 3 and derated per fig. 2 (3) for bi-directional types having v wm of 10 v and less, the i d limit is doubled (4) all terms and symbols are consistent with ansi/ieee c62.35 p4ke82 73.8 90.2 1.0 66.4 1.0 3.4 118 0.105 p4ke82a 77.9 86.1 1.0 70.1 1.0 3.5 113 0.105 p4ke91 81.9 100 1.0 73.7 1.0 3.1 131 0.106 p4ke91a 86.5 95.5 1.0 77.8 1.0 3.2 125 0.106 p4ke100 90.0 110 1.0 81.0 1.0 2.8 144 0.106 p4ke100a 95.0 105 1.0 85.5 1.0 2.9 137 0.106 p4ke110 99.0 121 1.0 89.2 1.0 2.5 158 0.107 p4ke110a 105 116 1.0 94.0 1.0 2.6 152 0.107 p4ke120 108 132 1.0 97.2 1.0 2.3 173 0.107 p4ke120a 114 126 1.0 102 1.0 2.4 165 0.107 p4ke130 117 143 1.0 105 1.0 2.1 187 0.107 p4ke130a 124 137 1.0 111 1.0 2.2 179 0.107 p4ke150 135 165 1.0 121 1.0 1.9 215 0.108 p4ke150a 143 158 1.0 128 1.0 1.9 207 0.108 p4ke160 144 176 1.0 130 1.0 1.7 230 0.108 p4ke160a 152 168 1.0 136 1.0 1.8 219 0.108 p4ke170 153 187 1.0 138 1.0 1.6 244 0.108 p4ke170a 162 179 1.0 145 1.0 1.7 234 0.108 p4ke180 162 198 1.0 146 1.0 1.6 258 0.108 p4ke180a 171 189 1.0 154 1.0 1.6 246 0.108 p4ke200 180 220 1.0 162 1.0 1.4 287 0.108 p4ke200a 190 210 1.0 171 1.0 1.5 274 0.108 p4ke220 198 242 1.0 175 1.0 1.2 344 0.108 p4ke220a 209 231 1.0 185 1.0 1.2 328 0.108 p4ke250 225 275 1.0 202 1.0 1.1 360 0.110 p4ke250a 237 263 1.0 214 1.0 1.2 344 0.110 p4ke300 270 330 1.0 243 1.0 0.93 430 0.110 p4ke300a 285 315 1.0 256 1.0 1.0 414 0.110 p4ke350 315 385 1.0 284 1.0 0.79 504 0.110 p4ke350a 333 368 1.0 300 1.0 0.83 482 0.110 p4ke400 360 440 1.0 324 1.0 0.70 574 0.110 p4ke400a 380 420 1.0 342 1.0 0.73 548 0.110 p4ke440 396 484 1.0 356 1.0 0.63 631 0.110 p4ke440a 418 462 1.0 376 1.0 0.66 602 0.110 p4ke480 432 528 1.0 389 1.0 0.58 686 0.110 p4ke480a 456 504 1.0 408 1.0 0.61 658 0.110 p4ke510 459 561 1.0 413 1.0 0.55 729 0.110 p4ke510a 485 535 1.0 434 1.0 0.57 698 0.110 p4ke540 486 594 1.0 437 1.0 0.52 772 0.110 p4ke540a 513 567 1.0 459 1.0 0.54 740 0.110 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol limit unit typical thermal resistance, junction to lead r jl 66 c/w typical thermal resistance, junction to ambient, l lead = 10 mm r ja 100 c/w electrical characteristics (t a = 25 c unless otherwise noted) device type breakdown voltage v br at i t (1) (v) test current i t (ma) stand- off voltage v wm (v) maximum reverse leakage at v wm i d (3) (a) maximum peak pulse current i ppm (2) (a) maximum clamping voltage at i ppm v c (v) maximum temperature coefficient of v br (%/c) min. max.
p4ke6.8 thru p4ke540a vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 88365 revision: 22-oct-08 4 note: (1) automotive grade aec q101 qualified ratings and characteristics curves (t a = 25 c unless otherwise noted) ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode p4ke6.8a-e3/54 0.350 54 5500 13" diameter paper tape and reel p4ke6.8ahe3/54 (1) 0.350 54 5500 13" diameter paper tape and reel figure 1. peak pulse power rating curve figure 2. pulse power or current vs. initial junction temperature 100 10 1 0.1 n on-repetiti v e p u lse w a v eform sho w n in fig. 3 t a = 25 c 0.1 1 10 100 1000 10 000 p ppm - peak p u lse po w er (k w ) t d - p u lse w idth ( s) 100 75 50 25 0 0 25 50 75 100 125 150 175 200 peak p u lse po w er (p pp ) or c u rrent (i pp ) derating in percentage ( % ) t j - initial temperat u re (c) figure 3. pulse waveform figure 4. typical junction capacitance uni-directional 0 1.0 2.0 3.0 4.0 0 50 100 150 t d t - time ( ms ) i ppm - peak p u lse c u rrent, % i rsm t r = 10 s peak v al u e i ppm half v al u e - i ppm i pp 2 10/1000 s w a v eform as defined b y r.e.a. t j = 25 c p u lse w idth (t d ) is defined as the point w here the peak c u rrent decays to 50 % of i ppm 10 100 1000 10 000 1 10 100 1000 meas u red at zero bias meas u red at stand-off v oltage v w m t j = 25 c f = 1.0 mhz v sig = 50 m v p-p c j - j u nction capacitance (pf) v br - breakdo w n v oltage ( v )
p4ke6.8 thru p4ke540a vishay general semiconductor document number: 88365 revision: 22-oct-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 5 package outline dimensions in inches (millimeters) figure 5. power derating curve figure 6. max. non-repetitive forward surge current uni-directional only p d - po w er dissipation ( % ) t l - lead temperat u re (c) 60 hz resisti v e or ind u cti v e load 100 75 50 25 0 0 25 50 75 100 125 150 175 200 l = 0.375" (9.5 mm) lead lengths 1 10 100 10 100 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t j = t j max. 8 .3 ms single half sine- w a v e figure 7. typical transient thermal impedance 10 100 1 0.001 0.01 0.1 1 10 100 1000 t p - p u lse d u ration (s) transient thermal impedance (c/ w ) do-204al (do-41) 0.107 (2.7) 0.0 8 0 (2.0) dia. 0.034 (0. 8 6) 0.02 8 (0.71) dia. 1.0 (25.4) mi n . 1.0 (25.4) mi n . 0.205 (5.2) 0.160 (4.1)
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